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Magnetic Field Due To A Thin Straight Wire01:28

Magnetic Field Due To A Thin Straight Wire

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Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
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Magnetic Field Of A Current Loop01:16

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Consider a circular loop with a radius a, that carries a current I. The magnetic field due to the current at an arbitrary point P along the axis of the loop can be calculated using the Biot-Savart law.
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The most common application of magnetic force on current-carrying wires is in electric motors. These consist of loops of wire, which are placed between the magnets with a magnetic field. When current flows through the loops, the magnetic field applies torque, which causes the shaft to rotate, thus converting electrical energy to mechanical energy.
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A solenoid is a conducting wire coated with an insulating material, wound tightly in the form of a helical coil. The magnetic field due to a solenoid is the vector sum of the magnetic fields due to its individual turns. Therefore, for an ideal solenoid, the magnetic field within the solenoid is directly proportional to the number of turns per unit length and the current. Conversely, the magnetic field outside the solenoid is zero.
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Magnetic Field Due to Two Straight Wires01:18

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Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
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Magnetic Field due to Moving Charges01:23

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A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
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低噪音纳米级旋传感器用于平面外磁场检测.

Ajay Jha1, Alvaro Palomino1, Stéphane Auffret1

  • 1University Grenoble Alpes, CEA, CNRS, Grenoble-INP, Spintec, 38000 Grenoble, France.

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一个新的纳米级磁道连接 (MTJ) 旋传感器为磁场检测提供了超过200mT的广泛动态范围. 它的设计尽量减少噪音,提高灵敏度和精度,用于先进的应用.

关键词:
磁场传感器是一个磁场传感器.磁道交叉点 磁道交叉点一个磁性的磁性.测量噪声的测量方法道中的磁电阻.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 纳米技术 纳米技术

背景情况:

  • 磁道连接 (MTJs) 对于磁传感至关重要.
  • 纳米磁铁中的状状态提供了独特的磁性.
  • 外平面磁场灵敏度对于许多应用来说至关重要.

研究的目的:

  • 开发和描述一个基于纳米尺度MTJ的旋传感器,用于外平面磁场.
  • 调查结构参数对传感器性能的影响.
  • 为了证明增强的动态范围,灵敏度和检测能力.

主要方法:

  • 制造具有强形状异构的100nm以下MTJ传感器.
  • 对传感器对磁场的反应进行实验测量.
  • 微磁模拟来分析旋核心动力学和缺陷影响.

主要成果:

  • 实现了超过200mT的动态范围,明显高于传统传感器.
  • 证明了低的内在噪声和改进的检测能力和分辨率.
  • 确定了取决于场的旋核心膨胀/收缩作为降低噪音的关键.

结论:

  • 纳米尺度外平面旋传感器架构显示出对高性能磁传感有很大的前景.
  • 由于旋流核心动力学,巴克豪森噪声的降低提高了准确性.
  • 可扩展的阵列集成为噪声和检测能力提供了进一步的改进.