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高灵敏度和快速响应的平热电子压力传感器通过在晶片中进行机械堆叠

Gongwei Hu¹, Li Zeng¹, Yihan Zhang¹

¹Hubei Engineering Research Center of Weak Magnetic-Field Detection, College of Mathematics and Physics, China Three Gorges University, Yichang 443002, China.

|February 16, 2026

概括

我们开发了一种新方法,用于创建与CMOS技术兼容的高性能/化 (Si/GaN) 压力传感器. 这些传感器表现出卓越的灵敏度和快速响应时间,适用于先进的电子设备.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

开发CMOS兼容的压力传感器对于可穿戴设备,人机接口和机器人技术至关重要.
的弱机电合和难以与压电材料集成的困难阻碍了高性能传感器的开发.

研究的目的:

使用一种新的机械堆叠策略,创建晶圆尺度,无表轴的Si/GaN压力传感器.
通过 nn 和 pn 接口架构实现电调节的压力响应,利用压力电子效应.

主要方法:

采用了可通用的机械堆叠策略,用于晶圆尺度集成Si和GaN.
构建了nn和pn连接架构,以利用压变频效应.
传感器性能特征,包括压力灵敏度,测量因子和响应时间.

主要成果:

实现了高压敏度 (43.34 meV/MPa) 和特殊的标尺系数 (5.8 × 10^6).
证明了微秒响应时间,用于检测冲动力和手指节律信号.
成功地集成了没有表的Si/GaN异构结构,使CMOS兼容.

结论:

机械堆叠为集成无表轴异质电子提供了一种通用方法.
开发的Si/GaN压电子传感器是高性能和CMOS兼容的,是传感器技术的先进发展.

关键词:

没有表轴的异质电子.快速响应快速响应高灵敏度的高灵敏度的高灵敏度的高灵敏度机械堆叠方式机械堆叠方式压力电子传感器压力电子传感器如果/GaNN

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