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在无双矿柔性记忆器中电阻切换的统计变异性分析

Susmita Das¹, Prabir Kumar Haldar¹, Pranab Kumar Sarkar²

¹Department of Physics, Cooch Behar Panchanan Barma University, Cooch Behar 736101, India. pranab.kumar.sarkar@aus.ac.in.

|February 17, 2026

概括

柔性无机双化物矿在电阻切换 (RS) 应用中表现有前途. 锡(IV) 化物设备表现出高性能和稳定性,为下一代非易失性存储器 (NVM) 设备铺平了道路.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
设备工程设备工程

背景情况:

无机双化物矿为电阻切换 (RS) 应用提供了卓越的功能稳定性.
灵活的电子产品需要强大可靠的活性材料用于存储器件.

研究的目的:

开发和描述一个灵活的电阻开关装置,使用 () 化物 (Cs2SnI6) 矿.
研究Ag/Cs2SnI6/ITO-PET装置的电阻开关机制,性能指标和机械强度.

主要方法:

制造一个灵活的Ag/Cs2SnI6/ITO-PET设备.
使用多个周期的电流-电压 (I-V) 测量对双极电阻开关的表征.
使用累积分布函数 (CDF) 分析设备变异性.
在各种曲条件下 (压力和拉力) 评估电气可靠性.

主要成果:

Ag/Cs2SnI6/ITO-PET装置在室温下表现出极好的双极RS特性.
实现了高开/关比 (~10^3),显著的耐力 (>10^6周期) 和长的保留时间 (~10^4秒).
该设备表现出良好的循环到循环均性和可重复性,降解最小.
在压力和拉力曲条件下没有观察到显著的性能降低.
导电 (CF) 模型,涉及化离子迁移,解释了RS机制.

结论:

锡 () 化物是灵活的电阻随机访问存储器 (RRAM) 设备的一个有前途的材料.
开发的设备显示了下一代低功耗非易失性存储器 (NVM) 应用的潜力.
材料的稳定性和机械强度是灵活电子的关键优势.

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