-SrTiO3Epitaxial

Yu Cai1, Meng-Yao Fu1, Huai-Yu Peng1

  • 1Shanghai Center of Brain-inspired Intelligent Materials and Devices, Key Laboratory of Polar Materials and Devices (Ministry of Education), Department of Electronics, East China Normal University, Shanghai, China.

概括

通过缺陷应变工程引入氧气空隙到酸 (SrTiO3) 膜中,可以在薄膜和自立膜中诱导稳定的铁电和磁性,用于先进的电子产品.