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Updated: Feb 19, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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接触门对使用对称双门结构的单层2D晶体管缩放的影响

Victoria M Ravel1, Sarah R Evans1, Samantha K Holmes1

  • 1Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States.

ACS nano
|February 17, 2026
PubMed
概括

接触门通过调节金属半导体接口上的载体传输来显著提高二维场效应晶体管 (2D FET) 的性能. 这种效应对于优化设备性能至关重要,尤其是在缩小尺寸的设备上.

关键词:
在MoS2的基础上,MoS2频道长度缩放的扩展方式联系方式 联系方式 联系方式 联系方式接触长度缩放的扩展场效应晶体管的领域效应晶体管.一个单层的TMD材料.有对称的双门.转移长度 转移长度 转移长度

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