超薄无形型氧化物膜通过冷沉积使其成为可能
Taehoon Kim1,2, I K M Reaz Rahman1,2, Inha Kim1,2
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
ACS nano
|February 17, 2026
概括
超薄的二氧化 (TeOx) 薄膜表现出对先进电子产品有前途的p型半导体性能. 低温制造产生具有高性能的超光滑薄膜,这对于下一代晶体管至关重要.
科学领域:
- 半导体物理 半导体物理
- 材料科学是一种材料科学.
- 设备工程 设备工程
背景情况:
- 像氧化 (IGZO) 这样的无形n型金属氧化物适合后端 (BEOL) 应用.
- 高性能的p型半导体对于单体3D集成至关重要.
研究的目的:
- 为了研究用于p型晶体管的超薄 Tellurium suboxide (TeOx) 薄膜.
- 为了实现10nm以下的TeOx薄膜,可接受的孔移动性用于实际设备应用.
主要方法:
- 使用 -80 °C的低温热蒸发制造TeOx晶体管的制造
- 薄膜性能的表征,包括表面粗度和电性能.
- 研究合金的增强性质.
主要成果:
- 超光滑的TeOx膜 (RMS粗度低至4 Å) 通过低温加工实现.
- 后门晶体管的开/关电流比为105,在5.5nm厚度下,其移动性为2.8cm2V-1s-1.
- 观察到稳定的p型切换到2.4nm通道厚度. 合金增加了开/关比,并允许带隙调整.
结论:
- 低温热蒸发可以为p型晶体管提供高质量的超薄TeOx薄膜.
- TeOx显示出作为用于BEOL应用的p型半导体的巨大潜力.
- 合金为基于TeOx的设备提供了进一步优化的途径.
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