Hf0.5Zr0.5O2

Sanghyo Lee1, Sojin Kim2, Jinseok Ryu1,3

  • 1Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

ACS nano
|February 18, 2026
PubMed
概括

氧化氧化物 (HZO) 薄膜中的电场诱导的相变是由氧空位迁移驱动的. 这项研究可视化了这些空缺职位如何导致转型,这对于铁电设备优化至关重要.