,Cu/Zr

Ruihan Li1,2, Xiangchen Li3, Huan Liu4

  • 1Center of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin, 150001, China.

PubMed
概括

分子动力学模拟揭示了痕速度和深度如何影响铜/ (Cu/Zr) 多层. 较高的速度改变了芯片的形成,而深度增加增加了力量和芯片体积,优化了材料应用.