相关实验视频

Updated: Feb 20, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K

12英寸电气异性异性玻利丁用于光电子计算

Yiqiang Zheng1,2, Hangyu Xu3,4, Hao Xu1,2

  • 1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

Nature nanotechnology
|February 18, 2026
PubMed
概括

一种新的低温材料,Mo4/3B2Tz玻利,可以实现可扩展的神经形态光电子计算. 这一突破促进了晶圆尺度集成,用于先进的传感器内处理和眼科疾病诊断.

更多相关视频

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.5K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.7K

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.5K