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高密度拓缺陷阵列通过两步干扰光对齐

Sunqian Liu¹, Inge Nys¹, Kristiaan Neyts²

¹Liquid Crystals and Photonics Group, Department of Electronics and Information Systems, Ghent University, Ghent, Belgium.

Advanced materials (Deerfield Beach, Fla.)

|February 20, 2026

概括

研究人员开发了一种可扩展的两步光对齐方法,以创建高密度液晶 (LC) 拓缺陷. 这种技术在先进的光学应用中显著增加了缺陷密度.

科学领域:

阴性液晶 (LCs) 是一种液晶.
拓缺陷工程拓缺陷工程
光子设备制造制造光子设备制造

背景情况:

阴性LC中的拓缺陷对于产生带有轨道角动量的激光束至关重要.
以前使用空间光调节器或数字镜子设备的方法实现了缺陷阵列,但缺陷密度有限.
基于像素的方法限制了LC设备中可实现的拓缺陷密度.

研究的目的:

提出并展示一种可扩展的方法,以实现在LC中具有显著更高的拓缺陷密度.
为了克服基于像素的光对齐技术的局限性.
允许制造具有增强功能的新型光学元件.

主要方法:

采用两步干扰照明工艺进行光对齐.
步骤1:干扰两个循环偏振光束,生成一个旋转的导体图案.
步骤2:使用双光束干扰进行振幅调制以引入缺陷,并控制照明剂量和角度.

主要成果:

与以前的方法相比,实现了比以前的方法更高的拓缺陷密度.
制造的2D缺陷图案,最小间距为1.25微米.
通过可扩展的两步光对齐程序演示了高缺陷密度网格的生成.

结论:

提出的两步干扰照明方法是一种可扩展和有效的技术,用于创建高密度LC的拓缺陷.
这种方法弥合了液晶拓光学和元表面之间的差距.
能够开发具有大角度衍射能力的光学元件.

关键词:

格子格子格子格子干扰照明照明的干扰.液晶水晶的液体晶体是什么图像对齐可以实现.拓学的缺陷拓上的缺陷

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