相关实验视频
Updated: Jun 20, 2026

13:39
Optical Trapping of Nanoparticles
Published on: January 15, 2013
概括
我们开发了一种新的背面照明的对单光子雪崩二极管 (SPAD),具有捕捉光的结构. 这种设计显著提高了用于先进成像应用的短波红外 (SWIR) 检测效率.
科学领域:
- 光电学是指光电子产品.
- 半导体设备 半导体设备
- 光子学 是一个光子学.
背景情况:
- 对单光子雪崩二极管 (SPAD) 为短波红外 (SWIR) 检测提供CMOS兼容性.
- 由于设备结构,当前的Ge-on-Si SPAD在1310 nm和1550 nm的检测效率上存在局限性.
研究的目的:
- 提出和评估一个背面照明 (BSI) 的Ge-on-Si SPAD,配有集成的捕光结构.
- 为了提高单光子检测效率 (SPDE) 在关键的SWIR波长.
主要方法:
- 利用有限差异时间域 (FDTD) 和TCAD模拟来优化纳米结构设计.
- 在基板后面实现了纳米圆阵列,在前面实现了反射器.
- 采用蒙面植入技术来控制电场分布.
主要成果:
- 在1310nm时达到37.7%的SPDEs,在1550nm时达到21.2%.
- 在室温下,暗计数率 (DCR) 降低了61.2%.
- 预计在低温温度下进一步抑制DCR.
结论:
- 拟议的BSI Ge-on-Si SPAD具有捕捉光的功能,可以显著改善SWIR光子检测.
- 这一进步使更大的SPAD阵列和更高的SWIR传感集成成为可能.
- 优化的设备结构对于下一代SWIR成像技术至关重要.
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