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Updated: Jul 7, 2026

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在Si波导上集成的Ni-InGaAs合金的InGaAs膜等离子体光探测器

Kentaro Komatsu, Taketoshi Nakayama, Tomohiro Akazawa

|February 20, 2026

概括

我们在Si平台上使用InGaAs开发了一种混合等离子波导光探测器. 这一进步简化了制造,并实现了光子应用的高速性能.

科学领域:

光子学和光电子学.
材料科学是一种材料科学.
半导体设备物理学半导体设备物理

背景情况:

光子技术提供了高的集成潜力,但缺乏高效的芯片上的光检测器.
III-V/Si混合集成是一种有希望的方法来克服的局限性.

研究的目的:

开发一种用于光子学的高速集成光探测器.
为了证明Ni-InGaAs合金作为等离子波导的电极的有效性.
为了简化混合等离子体波导光探测器的制造过程.

主要方法:

一个III-V/Si混合等离子波导光探测器的制造,该光探测器包含一个甲 (InGaAs) 膜.
使用-- (Ni-InGaAs) 合金作为电极.
设备性能的表征,包括响应能力,暗电流和高速操作.

主要成果:

证实Ni-InGaAs合金可以有效地作为等离子波导的电极.
通过简化制造工艺,可以将等离子波导光探测器集成到Si光子平台上.
在1V的0.13A/W的响应率,在400nA的暗电流下,达到0.13A/W的响应率.
展示了32.1 Gbit/s的清晰眼睛图,表明了高速能力.

结论:

拟议的III-V/Si混合等离子波导光探测器显示出在光子学中高速应用的巨大潜力.
Ni-InGaAs合金促进了简化集成和有效的电极功能.
这项工作为平台上的先进光电子集成电路铺平了道路.

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Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation

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