概括
我们开发了一种新型倾斜波激光器 (TWL),用于芯片上的光通信,使用添加的富氧化物. 这种CMOS兼容的光源以电信波长工作,为光子集成电路提供了可行的解决方案.
科学领域:
- 光子学和材料科学 材料科学
- 集成光学 集成光学 集成光学
- 半导体激光器半导体激光器
背景情况:
- 用添加的材料对于1.5μm电信波长至关重要.
- 光子集成电路 (Si PIC) 需要高效的芯片内光源.
- 倾斜波激光器 (TWL) 为Si PIC提供CMOS兼容性.
研究的目的:
- 在倾斜波 (TW) 模式下演示电信波长激光对离子 (Er3+).
- 为Si PICs开发一个CMOS兼容的芯片内光源.
- 为了研究Er3+添加剂的TWL的性能和特性.
主要方法:
- 使用Er3+合的富Si氧化物制造波导合的倾斜波激光器 (TWL).
- 光学送以实现在1.5微米电信波长的激光.
- 光发光量子收益率 (PLQY),光学净增益,值功率和激光性能的表征.
主要成果:
- 在TW模式下实现了Er3+的电信波长激光,PLQY为20.6%,光学净增益为24.3dB·cm−1.1.
- 证明了~40mW的低值光学动力.
- 观察到与TW模式模拟相一致的边缘发射光发光和显著的光放大.
结论:
- 富含Si氧化物的Er3+合TWL为Si PIC提供了可行的芯片内光源.
- 该研究为CMOS兼容的电信波长光源提供了一个优化途径.
- 这项工作推动了光源在光子学中的整合.
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