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基于可集成到CMOS上的无形半导体的红外深度传感器

Maurice Müller, Matthias David Weber, Lukas Giehl

|February 20, 2026

概括

一种新型的内在光混合探测器 (IPD) 提供高精度的光学深度传感. 这项技术克服了当前系统的局限性,为先进的深度传感应用程序提供了更简单,更可扩展的集成.

科学领域:

光电学是指光电子产品.
半导体设备半导体设备
光学传感传感器是什么?

背景情况:

当前的光学深度传感技术在平衡测量性能与系统简单性和可扩展性方面面临着挑战,特别是在高像素密度的情况下.
现有的解决方案往往难以实现高精度,同时保持易于集成和成本效益.

研究的目的:

引入和评估内在光混合探测器 (IPD) 作为高精度飞行时间深度传感的解决方案.
为了证明IPD能够克服当前深度传感技术的局限性.
探索IPD在可扩展和CMOS兼容的集成方面的潜力.

主要方法:

在无形半导体中利用电气引用的非线性混合过程进行深度传感.
开发和测试基于IPD技术的第一个深度传感器原型.
在可见 (457 nm) 和近红外 (785 nm) 波长下评估性能.

主要成果:

在开发的原型中达到高达47%的混合效率.
在使用457nm波长的距离从0m到2m处显示平均深度分辨率为5mm.
已确认近红外探测能力,灵敏度低至450μW/cm2在785nm.

结论:

内在光混合探测器 (IPD) 为实现高性能深度传感提供了一个有前途的途径.
IPD为深度传感器提供了一个简单,可扩展和CMOS兼容的集成平台.
该技术支持高像素填充率高达100%,为下一代光学深度传感解决方案铺平了道路.

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