非侵入性的多维容量传感器,用于在实体中监测创伤性脑损伤

Shawn Kim1, Yu-Jen Cheng1, Tianyi Li1

  • 1Department of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA.

Advanced materials technologies
|February 20, 2026
PubMed
概括

这项研究引入了一种非侵入性可穿戴传感器,用于持续监测创伤性脑损伤 (TBI). 该系统使用电容传感可靠地跟踪内压力 (ICP) 变化,改善患者的治疗结果.