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相关概念视频

Upsampling01:22

Upsampling

656
Managing signal sampling rates is essential in digital signal processing to maintain signal integrity. A decimated signal, characterized by a reduced frequency range due to its lower sampling rate, can be upsampled by inserting zeros between each sample. This upsampling process expands the original spectrum and introduces repeated spectral replicas at intervals dictated by the new Nyquist frequency. To refine this zero-inserted sequence, it is passed through a lowpass filter with a cutoff...
656
Aliasing01:18

Aliasing

709
Accurate signal sampling and reconstruction are crucial in various signal-processing applications. A time-domain signal's spectrum can be revealed using its Fourier transform. When this signal is sampled at a specific frequency, it results in multiple scaled replicas of the original spectrum in the frequency domain. The spacing of these replicas is determined by the sampling frequency.
If the sampling frequency is below the Nyquist rate, these replicas overlap, preventing the original...
709
Cascaded Op Amps01:16

Cascaded Op Amps

1.2K
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
1.2K
MOS Capacitor01:25

MOS Capacitor

1.6K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.6K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.2K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.2K
MOSFET Amplifiers01:17

MOSFET Amplifiers

584
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
584

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相关实验视频

Updated: Feb 22, 2026

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

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将Si CMOS的非理想性重新用于随机和模拟图像处理.

Been Kwak1, Ryun-Han Koo2, Changhyeon Han1

  • 1Department of Electrical Engineering, Hanyang University, Seoul 04763, Republic of Korea.

Science advances
|February 20, 2026
PubMed
概括

研究人员将半导体设备的非理想性,如生成重组噪声和负差电阻,重新用于高级随机模拟计算的功能资源. 这种单一设备的方法可以使用现有的CMOS技术实现多功能计算.

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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Last Updated: Feb 22, 2026

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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科学领域:

  • 半导体设备物理 半导体设备物理
  • 模拟计算架构的模拟计算架构
  • 材料科学 材料科学 材料科学

背景情况:

  • 在传统的半导体工程中,内在设备的非理想性通常被最小化.
  • 与1 / f噪声相比,对生成-重组 (G-R) 噪声和冲击电离诱导的负差电阻 (NDR) 给予了有限的关注.

研究的目的:

  • 为了证明先进的随机模拟计算的设备非理想性的战略重新利用.
  • 为了利用G-R噪声和NDR在单个设备层面进行多功能模拟计算.

主要方法:

  • 利用深层通道陷诱导的G-R噪声和冲击电离诱导的NDR在身体电流中.
  • 使用了在工业补金属氧化物半导体 (CMOS) 工艺中制造的完全耗尽的在绝缘体上的晶体管.
  • 通过重新配置应用偏差条件来实现多功能计算.

主要成果:

  • 证明了G-R噪声与可控制的时间相关性.
  • 实现了NDR,具有前所未有的峰值与谷间比率 (2.78 × 10^4).
  • 单个晶体管执行了随机加密,确定性信号读取和模拟反转.

结论:

  • 在成熟的CMOS技术中揭示了未知的计算潜力.
  • 提出了一个可扩展和节能替代基于异国情调材料的建筑.
  • 奠定了下一代模拟计算系统的基础.