将Si CMOS的非理想性重新用于随机和模拟图像处理
Been Kwak1, Ryun-Han Koo2, Changhyeon Han1
1Department of Electrical Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Science advances
|February 20, 2026
概括
研究人员将半导体设备的非理想性,如生成重组噪声和负差电阻,重新用于高级随机模拟计算的功能资源. 这种单一设备的方法可以使用现有的CMOS技术实现多功能计算.
科学领域:
- 半导体设备物理 半导体设备物理
- 模拟计算架构的模拟计算架构
- 材料科学 材料科学 材料科学
背景情况:
- 在传统的半导体工程中,内在设备的非理想性通常被最小化.
- 与1 / f噪声相比,对生成-重组 (G-R) 噪声和冲击电离诱导的负差电阻 (NDR) 给予了有限的关注.
研究的目的:
- 为了证明先进的随机模拟计算的设备非理想性的战略重新利用.
- 为了利用G-R噪声和NDR在单个设备层面进行多功能模拟计算.
主要方法:
- 利用深层通道陷诱导的G-R噪声和冲击电离诱导的NDR在身体电流中.
- 使用了在工业补金属氧化物半导体 (CMOS) 工艺中制造的完全耗尽的在绝缘体上的晶体管.
- 通过重新配置应用偏差条件来实现多功能计算.
主要成果:
- 证明了G-R噪声与可控制的时间相关性.
- 实现了NDR,具有前所未有的峰值与谷间比率 (2.78 × 10^4).
- 单个晶体管执行了随机加密,确定性信号读取和模拟反转.
结论:
- 在成熟的CMOS技术中揭示了未知的计算潜力.
- 提出了一个可扩展和节能替代基于异国情调材料的建筑.
- 奠定了下一代模拟计算系统的基础.
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