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Updated: May 20, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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关于Ga-Face GaN的异质性质和原子尺度蚀刻机制:对酸性和性溶液的比较研究

Ye Chen1, Xi Chen1, Yan Xing1

  • 1Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Dept. of Mechanical Engineering, Southeast University, Nanjing 211189, China.

Langmuir : the ACS journal of surfaces and colloids
|February 23, 2026
PubMed
概括

这项研究精确地测量了化 (GaN) 蚀刻速率,使用KOH/乙烯基醇 (EG) 的新型结构. 结果详细介绍了异型蚀刻机制,并预测了用于先进的GaN设备制造的微观结构演变.

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Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...