InP/ZnSe/ZnS

Zhihao Chen1, Jialu Li1, Changgang Yang1

  • 1State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Laser Spectroscopy, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.

概括

光氧化通过产生缺陷,严重降解化/化/硫化量子点 (InP/ZnSe/ZnS QDs). 这些缺陷导致超快的激子捕获,导致光电子设备的闪和减少光辐射.

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