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Updated: Feb 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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在HfZrO2-基于HfZrO2的高性能突触阵列的道连接处调节开关机制

Jiwon You1, Jeong-Han Kim2, Minsuk Song3

  • 1Department of AI Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|February 23, 2026
PubMed
概括

有混合开关的优化铁电道连接 (FTJ) 阵列表现出高道电阻 (TER) 以实现高效的神经形态计算. 这些可扩展的数组使先进的非挥发性内存和节能AI硬件成为可能.

关键词:
这就是HfZrO2的含量.铁电道交叉点 铁电道交叉点混合动力开关的开关是混合动力开关.这是一个大规模的横杆阵列.有空缺的氧气位.视觉变压器 视觉变压器

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