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用超薄氧化接口双极层为低泄漏氧化半导体内存的门电流工程

Fabia F Athena¹, Jonathan Hartanto^1,2, Matthias Passlack³

¹Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

|February 23, 2026

概括

我们为无形氧化物半导体晶体管开发了氧化接口层 (SiL). 这种SiL增强了值电压控制和设备可靠性,提高了内存电池的性能和降低了能源消耗.

科学领域:

材料科学材料科学材料科学
半导体设备物理半导体设备物理
电气工程电气工程

背景情况:

无形氧化物半导体 (AOS) 为先进的电子提供了潜力.
控制值电压 (V_T) 和提高可靠性是AOS晶体管技术的关键挑战.

研究的目的:

为 AOS 晶体管引入使用氧化接口层 (SiL) 的门电流工程方法.
评估SiL对V_T,设备性能,可靠性和内存细胞特征的影响.

主要方法:

使用超薄的原子层沉积SiL在AOS通道和高-κ门介电器之间制造AOS晶体管.
描述V_T转移,设备参数 (移动性,当前状态) 和在正偏差温度应力下的可靠性.
将SiL门堆集成到两晶体管增益电池 (GC) 内存中,并评估存储节点电压 (V_SN) 稳定性,保留时间和泄漏电流.

主要成果:

SiL至少启用了四个不同的V_T级别,具有高达500mV的正转移,而不会降低移动性或状态电流.
在225°C以下处理的设备在应力下显示了减少的负V_T转移,表明可靠性提高.
采用SiL工程的GC显示V_SN下降率降低了67%,保留时间高达10000秒,备用泄漏电流减少了3个数量级.

结论:

SiL 门电流工程方法为 AOS 晶体管提供了有效的 V_T 控制和更高的可靠性.
SiL集成显著提高了增益细胞内存设备的性能和能源效率.
这种方法为开发更稳定,更节能的半导体内存提供了可行的途径.

关键词:

这就是SiOxOx.一个双极二极体.获得细胞增益的细胞.门的介电器门的介电器接口接口接口接口接口多个VT的VT.有氧化物半导体半导体

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