在5纳米以下的一维过渡后金属单基化物门周围的MOSFET
Xiao-Lu Duan1, Yan-Dong Guo1,2, Ye-Wei Chen1
1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.
Nanoscale
|February 23, 2026
概括
像InTe和GaTe这样的过渡后金属单基化物纳米线为未来的通道全方位 (GAA) 金属氧化物半导体场效应晶体管 (MOSFET) 提供了卓越的性能. 这些p型设备实现了高驱动电流和低开关能量,在先进的CMOS技术方面表现优于同行.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 由于增强的静电控制,Gate-all-around (GAA) 金属氧化物半导体场效应晶体管 (MOSFET) 对于持续的设备缩放至关重要.
- 过渡后金属单化物 (PTMC) 正在成为下一代电子产品的潜在通道材料.
研究的目的:
- 为了研究p型 Telluride (InTe) 和 Telluride (GaTe) 纳米线GAA-MOSFETs对于先进的CMOS应用的潜力.
- 系统地分析他们的性能指标,包括驱动电流,切换能量和下值摆动,在积极缩放的门长度.
主要方法:
- 第一个原理量子运输模拟被用来建模PTMC纳米线GAA-MOSFETs.
- 设备性能在各种门长度 (Lg) 上进行了评估,重点关注高性能 (HP) 和低功耗 (LP) 应用基准.
主要成果:
- InTe 和 GaTe GAA-MOSFET 显示出异常的状态电流 (2470 μA μm−1 对于 HP, 1125 μA μm−1 对于 LP 在 Lg = 5 nm).
- 实现了低于60mV dec-1的下值波动 (SS),超过了博尔兹曼极限.
- 延迟时间 (τ) 和功率延迟产物 (PDP) 达到或超过了2028年半导体国际技术路线图 (ITRS) 的目标,即使在Lg低至2-3nm.
结论:
- InTe和GaTe纳米线是非常有前途的p型通道材料,用于5nm以下,超低功率,高性能CMOS技术.
- 与传统的相比,这些材料提供了高驱动电流和低开关能量的优越平衡.
- 这些发现为后CMOS时代的设备铺平了道路,提高了效率和速度.
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