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在InP上通过分子束Epitaxy对MnTe的异磁性和非中心对称性多态体之间的可编程相位选择

An-Hsi Chen¹, Parul R Raghuvanshi¹, Jacob Cook^1,2

¹Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS applied materials & interfaces

|February 25, 2026

概括

研究人员通过改变化 (InP) 基质表面,精确控制了生长过程中化 (MnTe) 薄膜的晶体结构. 这种选择性增长可以为先进的自旋电子和微电子设备提供量身定制的特性.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
晶体学晶体学是指结晶学.

背景情况:

在表轴生长过程中选择特定的晶体多态是调整材料特性至关重要的.
telluride (MnTe) 呈现了变磁和非中心对称相,有可能用于旋电学和微电子学.

研究的目的:

为了证明MnTe多态的可编程相选择性,在分子束表 (MBE) 增长过程中.
调查基板表面终结和应变在控制MnTe相位选择中的作用.

主要方法:

在具有不同表面终点的网格匹配化 (InP) 基板上MnTe的长轴增长 ((111) A和 (111) B).
使用电子显微镜,X射线光发射谱学 (XPS) 和反射高能电子衍射 (RHEED) 进行了表征.
分析界面能量和应变效应的第一原则计算.

主要成果:

六角NiAs结构 (变磁MnTe) 在In-terminated (111) A InP表面上得到稳定.
立方 ZnS 结构 (非中心对称 MnTe) 在 P 终端 (111) B InP 表面上稳定.
发现阶段选择是从接口开始的,并在生长过程中传播.

结论:

在MBE过程中,对InP基板表面的微妙修改可以精确控制MnTe多态选择.
接口终端和应变是控制相位稳定的关键因素.
高质量,相纯的MnTe薄膜可以选择性地生长,为新型的自旋电子和微电子应用铺平了道路.

关键词:

变磁主义是一种改变磁性的现象.反铁磁主义的反铁磁主义.磁力是指磁性的作用.分子束表 (MBE) 是一种分子束表.非中心对称的非中心对称.可编程合成可编程合成旋转动量锁定旋转动量锁定旋转电子技术 (spintronics) 是一个技术.

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