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Crystal Growth: Principles of Crystallization01:25

Crystal Growth: Principles of Crystallization

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Crystallization is a phase transformation process in which crystals are precipitated from a supersaturated solution or formed from other sources. During crystallization, atoms or molecules arrange themselves into a well-defined, rigid crystal lattice to minimize energy.
Initiating crystallization involves manipulating the concentration of the solute and the temperature of the solution. Since crystal growth occurs when the ratio of concentration and solubility of the solute in the solvent...
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Optimization of Crystal Growth for Neutron Macromolecular Crystallography
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在微重力作用下,均的InAsSb散装单晶体的生长.

Jidong Huang1,2, Huaiwen Zheng1, Zhigang Yin3,4

  • 1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

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在地球上生长均的甲抗化物 (InAsSb) 晶体是很困难的. 中国空间站的微重力使高质量的InAsSb晶体生长成为可能,克服了先进应用的先前限制.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 固态物理 固态物理
  • 晶体的成长 晶体的成长

背景情况:

  • 在陆地条件下,由于溶液分离和形态不稳定性,成长均的印化物抗化物 (InAsSb) 大量晶体具有挑战性.
  • 浮力驱动的对流在地面生长过程中显著影响晶体质量.

研究的目的:

  • 为了研究在微重力中生长构成均的InAsSb散体晶体的可行性.
  • 克服陆地晶体生长方法对InAsSb.的局限性.

主要方法:

  • 在中国空间站上使用了垂直梯度结方法.
  • 采用化 (InAs) 种子用于晶体生长.
  • 利用微重力来抑制浮力驱动的对流,并促进扩散主导的固化.

主要成果:

  • 成功生长了一种单晶 InAsSb 合金 (InAs0.933Sb0.067) ,其 Sb 组成均 (±0.5 mol%).
  • 微重力培养的晶体没有表现出宏观的空隙或条纹,并且失位密度减少了十倍.
  • 与陆地对应物相比,观察到更优质的晶体质量和电性质.

结论:

  • 微重力提供了一个独特的环境,可以克服地面InAsSb晶体生长的内在限制.
  • 实现了在地球上无法达到的晶体质量,这对先进的光电子设备有潜在的影响.
  • 证明了在微重力下垂直梯度结方法的有效性,用于生产高质量的半导体晶体.