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优化增强模式的MIS-GaN HEMT与双通道用于简单的过程使用TCAD模拟的优化

Kang Hee Lee1, Yeonsil Yang1, Junseok Heo2

  • 1Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.

Scientific reports
|February 25, 2026
PubMed
概括

一种新的双通道化 (GaN) 高电子流动性晶体管 (HEMT) 能够实现增强模式 (E模式) 操作. 这种设计可以在没有复杂的制造过程中实现正值值电压转移,为E-mode GaN HEMTs提供了更简单的路径.

关键词:
2DEGEG 2DEGEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2DEG 2这是一个AlGaN/GaN异质连接.身体效应 身体效应它是双通道的.在E模式下.这是一个IDC-HEMT.这是ISC-HEMTT.这是MIS-HEMTT.这是一个TCAD模拟.

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