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Updated: Jul 14, 2026

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对于射频应用的钻石覆盖的GaN HEMT的最新进展

Yuanmeng Xiang1, Mei Wu1, Haolun Sun1

  • 1National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China.

Nanomaterials (Basel, Switzerland)
|February 26, 2026
PubMed
概括

钻石封顶通过改善散热来增强化 (GaN) 晶体管,克服了高功率无线电频率应用中的性能限制. 这项技术为先进的电子设备提供了一个有前途的解决方案.

关键词:
获得了HEMTs.这是TBR TBR.钻石片是一个钻石片.热管理 热管理

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