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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
碳扩散引起的压力对钻石/GaN异质连接的特性的影响
Haolun Sun1, Mei Wu1, Peng Xu2
1National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China.
在钻石-GaN装置中,碳扩散到SiNx介层中,通过增加二维电子气体 (2DEG) 密度,降低了热极限电阻 (TBR) 并提高了电性能. 本研究探讨了碳扩散对散热和设备可靠性的协同效应.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体设备工程 半导体设备工程
背景情况:
- 钻石-GaN集成有效地减轻了动力设备中的自热.
- 接口上的热边界电阻 (TBR) 阻碍了高效的散热.
- 已知碳扩散到SiNx介层中可降低TBR,但其对应力和设备性能的影响尚未完全理解.
研究的目的:
- 研究钻石-GaN异构结构中碳扩散的热传输和电性能协同调节.
- 了解碳扩散引起的压力对设备特性的影响.
- 为了优化高功率 GaN 设备的热管理和机械可靠性.
主要方法:
- 传输电子显微镜 (TEM) 用于界面微观结构的表征.
- 暂时热反射率 (TTR) 用于量化热传输.
- 经典分子动力学 (MD) 模拟用于分析物理机制.
- 几何相位分析 (GPA) 用于量化内在应力.
主要成果:
- 强化碳扩散通过增加重叠状态的音声密度来降低TBR.
- 碳扩散诱导的应力传播到AlGaN/GaN异构结构中.
- 应力调制将压电极化增强约32%,将二维电子气体 (2DEG) 板密度增加5%.
结论:
- 碳扩散在钻石-GaN设备中提供了改善散热和增强电气性能的双重好处.
- 了解压力演变对于利用碳扩散来优化设备至关重要.
- 本文介绍了优化高功率 GaN 设备的热管理和机械可靠性的策略.
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