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Updated: Feb 28, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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设计和模拟一个p型双交桥树FET与全面的直流,模拟/射频和线性分析,用于CMOS电路应用

S Mounika1, Umakanta Nanda2

  • 1School of Electronics Engineering, VIT-AP University, Beside AP Secretariat, Amaravati, 522241, India.

Scientific reports
|February 26, 2026
PubMed
概括

研究人员设计了一种新的p型双交桥树形场效应晶体管 (DIB-TreeFET) 用于三纳米以下节点. 这种先进的晶体管设计显著提高了性能,并为下一代RF系统芯片应用提供了有前途的解决方案.

关键词:
双交桥树FETFET双交桥树FET纳米板 FET 的使用.短通道效应 (SCE) 是指短通道效应.堆叠的氧化物堆叠在一起.调节频率调节频率的调节频率这就是VCO VCO.p型晶体管 p型晶体管

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