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Updated: Feb 28, 2026

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高组成,超低功率GaAsSb/InGaAs异质连接道场效应晶体管

Yan Liu1, Xiang Li1, Dao-Hua Zhang1

  • 1Shenzhen Pinghu Laboratory, Shenzhen 518111, China.

Micromachines
|February 27, 2026
PubMed
概括

这项研究通过调整组合和兴奋剂来优化道场效应晶体管 (TFET). 在InGaAs层中更高的In成分提高了设备性能和道化能力.

关键词:
这是一个GaAsSb/InGaAs异质连接.参数优化的参数优化低于门值的波动可以改变.道场效应晶体管 (TFET) 的使用

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