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对用于高温应用的III-化物MEMS压力传感器的研究

Makhluk Hossain Prio¹, Maruf Morshed¹, Lavanya Muthusamy²

¹Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA.

|February 27, 2026

概括

AlGaN/GaN MEMS 压力传感器在高温下表现稳定. 这些宽带隙传感器在高达300°C的恶劣环境中提供可靠,快速和可调的压力传感器.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
机械工程机械工程

背景情况:

AlGaN/GaN异质连接场效应晶体管 (HFET) 具有适用于高温应用的宽带间隔性能.
微电机系统 (MEMS) 压力传感器需要强大的设计,以适应极端的操作条件.

研究的目的:

为了研究基于AlGaN/GaN HFET的MEMS压力传感器的高温性能.
在高温下评估传感器稳定性,灵敏度和响应时间.

主要方法:

在室温和高达250°C的不同压力下,传感器电阻变化的实验性表征.
基于COMSOL的有限元 (FE) 模拟与预测传感器响应的理论模型相结合.
门偏差依赖分析,以评估灵敏度可调性.

主要成果:

观察到排水源电阻的显著变化 (ΔR_DS/R_{DS(0)) 在室温下为0.32%,在250°C时为0.65%.}
FE模拟与实验结果非常相匹配,在室温下理论 ΔR_DS/R_DS(0) 值为 0.45%.
通过负门电压实现了增强的灵敏度,并且在高达300°C的温度下确认了稳定的运行,响应时间<10 ms.

结论:

基于AlGaN/GaN HFET的MEMS压力传感器在高温下表现稳定可靠.
传感器的可调节灵敏度和快速响应时间使其适用于恶劣的高温环境.
实验和模拟方法的结合验证了传感器的设计和预测性能.

关键词:

这是一个COMSOL模拟.在MEMS MEMS中使用.的化是的化物.高温的高温的高温的高温这是一种压电式电体.两极分化是一种极化.压力传感器压力传感器压力传感器的压力传感器灵敏度灵敏度灵敏度灵敏度灵敏度压力压力压力压力

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