在总电离剂量应力下,冷冗余直流/直流转换器的辐射诱导退化
Xiaojin Lu1,2, Zhujun Xi3, Qifeng He2
1Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China.
Micromachines
|February 27, 2026
概括
冷冗余直流/直流转换器中的辅助电源易受总电离剂量 (TID) 影响. 在TID压力下,辅助供应和启动边缘的降解需要专注的辐射硬化设计.
科学领域:
- 电气工程 电气工程
- 辐射的影响 辐射影响
- 电力电子 电力电子 电力电子
背景情况:
- 冷冗余对于在恶劣环境中可靠的直流/直流转换器至关重要.
- 总电离剂量 (TID) 的影响会降低电子元件的性能,影响转换器的性能.
- 了解降解机制对于设计防辐射电源至关重要.
研究的目的:
- 在冷冗余下调查DC/DC转换器的TID降解特性.
- 评估TID对优化RCC隔离辅助电源电路的影响.
- 在经过TID的冷冗余转换器中确定关键漏洞.
主要方法:
- 在不同的剂量速率下,Co γ-ray辐射高达100krad (Si).
- 在系统和设备层面进行电气表征,重点是VDMOS晶体管.
- 对值电压转移和排水电流变化的分析.
主要成果:
- 主输出电压和效率保持稳定;辅助电源电压和效率明显下降.
- 在VDMOS晶体管中观察到的负值电压转移,与剂量-速率依赖.
- 在低门电压下增加的排水电流表明重新启动风险加剧.
结论:
- 辅助电源和启动边缘是TID.下的冷冗余直流/直流转换器的关键漏洞.
- 在VDMOS晶体管中,氧化物被困电荷效应主导了降解.
- 防辐射设计应优先考虑辅助电源和启动电路.
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