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Updated: Feb 28, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
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4.11 A/1650 V 蓝宝石基板 GaN MIS-HEMT 具有薄缓冲器,用于中压电源应用

Changhao Chen1, Yang Liu1, Xiaowei Zhou1,2

  • 1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.

Micromachines
|February 27, 2026
PubMed
概括

蓝宝石基板使高压化 (GaN) 电源设备具有成本效益,使用薄的缓冲层. 这些GaN金属绝缘体半导体高电子移动性晶体管 (MIS-HEMT) 显示出卓越的断裂电压和运行稳定性.

关键词:
获得了错误的头盔.在高温下运行.长期可靠性 长期可靠性蓝宝石基板是一种蓝宝石基板.薄薄的缓冲层是一种缓冲层.

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