2D和3D数字间电容和偏差测试技术在毫米波应用的MnM插座器上
Gabriel Griep1, Robert G Bovadilla1, Leonardo G Gomes1
1Microelectronics Department, University of São Paulo, São Paulo 05508-010, Brazil.
Micromachines
|February 27, 2026
概括
本研究介绍了使用金属纳米线膜 (MnM) 插座技术用于毫米波 (mmWave) 应用的新型3D电容器. 与传统的2D设计相比,这些3D电容器的电容密度要高得多.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 毫米波 (mmWave) 应用需要具有高性能的先进被动元件.
- 传统的2D数字间电容器 (IDC) 在电容密度和在更高频率的性能方面存在局限性.
- 金属纳米线膜 (MnM) 插座技术为3D设备制造提供了一个新的平台.
研究的目的:
- 介绍和描述两种类型的电容器,这些电容器是使用MnM插曲器技术制造的,用于毫米波频率.
- 为了比较标准的2D IDC与新的3D电容器的性能.
- 为了证明3D制造在增强电容密度和毫米波应用中的潜力.
主要方法:
- 使用MnM插座技术制造标准的2D数字间电容器 (IDC) 和新的3D电容器.
- 对两个电容器类型的寄生效应考虑的数值块元素建模.
- 制造到70 GHz的电容器的特征,包括电容,自我共振频率,质量因子和电容密度.
- 模拟和制造用于射频窒息应用的薄膜电阻.
主要成果:
- 制造的3D电容器实现了30fF至160fF之间的电容值,具有适合毫米波应用的自我共振频率.
- 表面电容密度从4 pF/mm2到8 pF/mm2不等,明显超过传统的2D电容器.
- 在40 GHz的质量系数在16到4之间,表明性能良好.
- 薄膜电阻的成功模拟和制造表明了RF-choke功能的潜力.
结论:
- 该MnM插座器技术使得先进的3D电容器制造具有优越的电容密度为毫米波应用程序.
- 开发的3D电容器表现出有希望的性能特征,包括高电容值和合适的自我共振频率.
- 薄膜电阻的集成进一步扩大了这种技术对毫米波电路的实用性,例如偏差线.
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