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在替代基板上生长的HgCdTe红外探测器的界面特征

Yuanyuan Li^1,2, Qingjun Liao¹, Huihao Li¹

¹National Key Laboratory of Infrared Detection Technologies, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.

Sensors (Basel, Switzerland)

|February 27, 2026

概括

研究人员优化了HgCdTe/GaAs对红外探测器的接口,通过去除基板和使表面被动化. 这显著提高了量子效率和响应能力,克服了替代基板的局限性.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

CdZnTe基板限制了大尺寸,低成本的HgCdTe红外焦平面阵列 (IRFPA).
像GaAs这样的替代基板上的表轴生长面临挑战,因为~14%的晶格不匹配,导致缺陷和界面重组.
这些缺陷会降低红外探测器的性能.

研究的目的:

为HgCdTe/GaAs.As开发一个接口优化方法.
通过解决接口缺陷和重组,提高基于GaAs的HgCdTe红外探测器的性能.

主要方法:

使用化学机械抛光 (CMP) 和选择性湿化学蚀刻去除基板.
用基溶液 (Br2-HBr) 消除表面损伤层.
使用复合介电膜同时进行表面被动化和光学反射.

主要成果:

平均量子效率从58%增加到84% (3.5-6.1微米).
黑体反应能力从8.7×10^6V/W提高到1.6×10^7V/W,在80K时.
性能达到与基于CdZnTe的探测器相当的水平.
接口优化将表面潜力降低了两倍,抑制了重组.

结论:

提出的界面优化方法有效地提高了HgCdTe/GaAs探测器的性能.
这种方法克服了替代基板的局限性,使高性能红外探测器成为可能.
优化的接口显著抑制了重组,从而实现了卓越的量子效率和响应性.

关键词:

在GaAs基板上.在 HgCdTe 的基础上.接口重组组合.

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