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Updated: Feb 28, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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通过Schottky屏障高度调制,改善了TiO2Schottky装置的感应

Xiaochuan Long1,2,3,4, Xiao Zhang2,3,4, Zheng Lu1

  • 1School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.

Sensors (Basel, Switzerland)
|February 27, 2026
PubMed
概括

优化二氧化 (TiO2) 纳米管传感器的化温度显著提高了气体传感性能. 500°C的火最大化了舒特基屏障高度,导致H2反应增加了100倍.

关键词:
斯科特基屏障的高度是斯科特基十字路口是斯科特基十字路口.的TiO2纳米管.热温度是指热温度的温度.气传感器是一种气传感器.

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