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相关概念视频

Photoluminescence: Applications01:14

Photoluminescence: Applications

Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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InGaN/GaN多量子井LED阵列用于短距离光学链路.

Xueyao Lu1, Xumin Gao1, Xiaoxuan Wang2

  • 1GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing, 210003, China. qinfeifei@njupt.edu.cn.

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概括

本研究介绍了用于高速光学链路的InGaN/GaN LED阵列,每通道达到100 Mbps以上,并为数据中心实现多输入多输出 (MIMO) 通信.

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科学领域:

  • 光电和通信领域的光电子和通信领域.

背景情况:

  • 可见光通信 (VLC) 是无线基础设施的关键技术.
  • 光学互连对于节能数据中心至关重要.

研究的目的:

  • 开发和描述用于高速,短距离光学链路的InGaN/GaN LED阵列.
  • 评估其多道和MIMO通信的潜力.

主要方法:

  • 一个10x10 InGaN/GaN多量子井 (MQW) LED阵列的制造与矩阵电极注入.
  • 电光发光,调制带宽和信号传输的表征.
  • 在开启关闭调节和排列平地配置下进行测试.

主要成果:

  • 单个LED (200x200μm) 发出绿光 (~530nm),带宽为5.3-13.7MHz的3 dB.
  • 实现了50 Mbps的数据速率,在更高的电流下超过100 Mbps,并具有较低的位误差率.
  • 理论上的MIMO数据速率超过了500Mbps.

结论:

  • 紧的InGaN/GaN LED阵列显示了集成光学链接的巨大潜力.
  • 演示的性能支持视频和音频传输.
  • 需要进一步改善电力消耗.