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InGaN/GaN多量子井LED阵列用于短距离光学链路
Xueyao Lu1, Xumin Gao1, Xiaoxuan Wang2
1GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing, 210003, China. qinfeifei@njupt.edu.cn.
Nanoscale
|February 27, 2026
概括
本研究介绍了用于高速光学链路的InGaN/GaN LED阵列,每通道达到100 Mbps以上,并为数据中心实现多输入多输出 (MIMO) 通信.
科学领域:
- 光电和通信领域的光电子和通信领域.
背景情况:
- 可见光通信 (VLC) 是无线基础设施的关键技术.
- 光学互连对于节能数据中心至关重要.
研究的目的:
- 开发和描述用于高速,短距离光学链路的InGaN/GaN LED阵列.
- 评估其多道和MIMO通信的潜力.
主要方法:
- 一个10x10 InGaN/GaN多量子井 (MQW) LED阵列的制造与矩阵电极注入.
- 电光发光,调制带宽和信号传输的表征.
- 在开启关闭调节和排列平地配置下进行测试.
主要成果:
- 单个LED (200x200μm) 发出绿光 (~530nm),带宽为5.3-13.7MHz的3 dB.
- 实现了50 Mbps的数据速率,在更高的电流下超过100 Mbps,并具有较低的位误差率.
- 理论上的MIMO数据速率超过了500Mbps.
结论:
- 紧的InGaN/GaN LED阵列显示了集成光学链接的巨大潜力.
- 演示的性能支持视频和音频传输.
- 需要进一步改善电力消耗.
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