Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

2s-DAS: Two-Stream Diffusion with Multi-Modal Fusion for Temporal Action Segmentation.

Journal of imaging·2026
Same author

Integrating machine learning-based molecular design with experimental validation for the discovery of EGFR inhibitors in lung cancer.

Molecular diversity·2026
Same author

Efficient and accurate neural-field reconstruction using resistive memory.

Nature·2026
Same author

Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 10<sup>6</sup> On/Off Ratio under ±1 V Gate-Voltage Sweep.

Nano letters·2026
Same author

Enriched Environment Suppresses Neuronal Ferroptosis Through SIRT1/AKT/GSK3β-Dependent Glycogen Metabolic Reprogramming After Cerebral Ischemia-Reperfusion.

Antioxidants (Basel, Switzerland)·2026
Same author

MS-PANet: Multi-Scale Spatial Pyramid Attention for Effective Drainage Pipeline Image Dehazing.

Journal of imaging·2026
Same journal

Cell Membrane-Engineered FePDA Nanoparticles Integrate Ferroptosis and Antitumor Immunity.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Finding the Perfect Match: Investigation of 1,2-Diketone-Based Materials for Use as Cathode Active Material in Rechargeable Magnesium Batteries.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Stabilization of Cu Species in UiO-66 Metal-Organic Framework for CO<sub>2</sub>-to-Methanol: Insights From Operando X-ray and Electron Microscopy Studies.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

BODIPY Photocage-Based Injectable Hydrogel for Light-Controlled Nanoparticle Release.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Multifunctional Nanodiamond Conjugate With a Tumor-Specific EGFR-Targeting Peptide and Photoactivated CO Release for Improved Therapeutic Efficacy in Head and Neck Cancers.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Multifunctional Self-Bonding Biocomposites Enabled by Uniform Dispersion of Carbon Nanotube via In Situ Lignin and Multiple Noncovalent Bonds.

Small (Weinheim an der Bergstrasse, Germany)·2026
查看所有相关文章

相关实验视频

Updated: Feb 28, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

13.3K

具有超宽可编程窗口的多位浮动门内存.

Ce Li1,2, Ning Lin3, Dongliang Yang1,2

  • 1Centre For Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.

Small (Weinheim an der Bergstrasse, Germany)
|February 27, 2026
PubMed
概括
此摘要是机器生成的。

研究人员开发了一种新型的二化/六角化/多层石墨烯异构连接记忆装置. 这一突破为高级计算和信息处理提供了高密度,快速运行和光电子集成.

关键词:
浮式门的内存存储器多层次的内存多层次的内存.负光导电性是一种负光导电性.储存密度超高的储存密度超高的

更多相关视频

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K

相关实验视频

Last Updated: Feb 28, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

13.3K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术 纳米技术
  • 固态物理 固态物理

背景情况:

  • 数据密集型计算和光电子需要先进的内存解决方案.
  • 现有的浮式门内存在密度,多层次能力和光电子集成方面面临限制.

研究的目的:

  • 开发一种具有增强性能的范德瓦尔斯异质连接记忆装置.
  • 探索其用于神经形态和光电子信息技术的潜力.

主要方法:

  • 二化/六角化/多层石墨烯 (MoTe2/hBN/MLG) 范德瓦尔斯异质连接的制造.
  • 电气和光学属性的表征,包括内存窗口,响应速度,耐久性和数据保留.
  • 在内存计算中实现图像分类任务的实现.

主要成果:

  • 实现了超宽的p型内存窗口 (~199.2V) 和高内存窗口比率 (90.5%).
  • 证明了超高的存储密度 (> 10^13 cm^-2),超快的响应速度 (50 ns) 和强大的耐用性 (> 10^6 周期).
  • 展示了多层内存 (>6位电,>7位光学) 和成功模拟突触可塑性和CIFAR-10图像分类 (>95%准确性).

结论:

  • MoTe2 / hBN / MLG异质连接代表了内存设备技术的重大进步.
  • 该设备显示了可扩展的神经形态和光电子信息处理应用程序的巨大潜力.
  • 它的混合数字-模拟架构能够实现高效的内存计算.