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具有超宽可编程窗口的多位浮动门内存

Ce Li^1,2, Ning Lin³, Dongliang Yang^1,2

¹Centre For Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.

Small (Weinheim an der Bergstrasse, Germany)

|February 27, 2026

概括

研究人员开发了一种新型的二化/六角化/多层石墨烯异构连接记忆装置. 这一突破为高级计算和信息处理提供了高密度,快速运行和光电子集成.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

数据密集型计算和光电子需要先进的内存解决方案.
现有的浮式门内存在密度,多层次能力和光电子集成方面面临限制.

研究的目的:

开发一种具有增强性能的范德瓦尔斯异质连接记忆装置.
探索其用于神经形态和光电子信息技术的潜力.

主要方法:

二化/六角化/多层石墨烯 (MoTe2/hBN/MLG) 范德瓦尔斯异质连接的制造.
电气和光学属性的表征,包括内存窗口,响应速度,耐久性和数据保留.
在内存计算中实现图像分类任务的实现.

主要成果:

实现了超宽的p型内存窗口 (~199.2V) 和高内存窗口比率 (90.5%).
证明了超高的存储密度 (> 10^13 cm^-2),超快的响应速度 (50 ns) 和强大的耐用性 (> 10^6 周期).
展示了多层内存 (>6位电,>7位光学) 和成功模拟突触可塑性和CIFAR-10图像分类 (>95%准确性).

结论:

MoTe2 / hBN / MLG异质连接代表了内存设备技术的重大进步.
该设备显示了可扩展的神经形态和光电子信息处理应用程序的巨大潜力.
它的混合数字-模拟架构能够实现高效的内存计算.

关键词:

浮式门的内存存储器多层次的内存多层次的内存.负光导电性是一种负光导电性.储存密度超高的储存密度超高的

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