相关实验视频

Updated: Mar 1, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.3K

循环极化 (0001) 基于InGaN的LED集成与GaN的地表转移

Yohei Taguchi, Yuki Murata, Kyohei Suzuki

    Optics letters
    |February 27, 2026
    PubMed
    概括

    研究人员开发了一种新的循环极化发光二极管 (CP-LED),使用基于InGaN的材料和超表面. 这种创新的设备实现了高极化和高效率,克服了CP光源之前的局限性.

    更多相关视频

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.7K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.6K

    相关概念视频

    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    715