在高温下,ALD衍生WO3-x导致几乎没有唤醒的铁电Hf0.5Zr0.5O2
Nashrah Afroze1, Jihoon Choi2, Salma Soliman1
1Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
概括
氧化可以提高 hafnium-zirconium-oxide铁电膜的热可靠性. 这一突破通过减少在高温下唤醒周期来提高先进计算的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体设备物理 半导体设备物理
背景情况:
- 先进的计算需要3D整合内存材料,如铁电.
- 记忆材料必须承受高温 (125°C) 才能实现后端线路集成.
- 基于HfO2的铁电器在高温下表现出热不稳定性和显著的唤醒效应.
研究的目的:
- 为了提高超薄Hf0.5Zr0.5O2铁电膜的热可靠性.
- 研究氧化物 (WO3-x) 层在高温下稳定铁电性能的作用.
- 为了减少用于高温操作的铁电记忆器的唤醒效应.
主要方法:
- 制造具有集成WO3-x氧气储存层的超薄Hf0.5Zr0.5O2薄膜.
- 在高温下 (125°C) 的铁电性能的电特性.
- 第一个原则是密度函数理论 (DFT) 计算,以了解相位稳定性和声子行为.
主要成果:
- 一个WO3-x层有效地抑制了Hf0.5Zr0.5O2在125°C的铁电到抗铁电过渡.
- 在原始状态下极化损失被最小化,唤醒效应被大大减少 (105到10个周期).
- DFT的计算证实,WO3通过增加能量间隙和有利的声子模式来增强形铁电相稳定性.
结论:
- 引入可调节的WO3-x氧气是一个可行的策略,用于热强的铁电记忆.
- 这种方法使基于HfO2的铁电在JEDEC标准后端温度下可靠运行.
- 这些发现为在先进的3D集成计算架构中克服内存墙铺平了道路.
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