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升高还是下降? 找到最佳的门架构,以提高石墨烯晶体管的静态性能

Tzu-Jung Huang1,2, Andrew Spencer3, Luke Ingraham1

  • 1Department of Microsystems Engineering, Rochester Institute of Technology USA ivan.puchades@rit.edu.

Nanoscale advances
|March 2, 2026
PubMed
概括

沉门架构显著提高了石墨烯场效应晶体管 (GFET) 的性能和产量. 这一进步解决了石墨烯晶体管制造的关键挑战,为低功耗模拟应用铺平了道路.

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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