PtTe2/Ge Schottky二极管的双区域温度调节增长用于从可见到4.2μm的高速宽带光检测

Yiliang Chen1, Yuzhuo Bai2, Shaoqiu Ke1

  • 1Innovation Platform for the Research and Development of Silicon-Based Semiconductor Optoelectronic Chips, College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China.

概括

通过对二维二甲 (PtTe2) 薄膜的控制合成,可以定制光探测器. 优化的HRMO-PtTe2/Ge设备提供高灵敏度,而LRSO-PtTe2/Ge则为成像提供快速响应.