低压U形射频MEMS分流开关集成用于K频段相位阵列光束转向
Y Anusha1, Koushik Guha2, Kavicharan Mummaneni2
1Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, Assam, India. anusha.yellapu2010@gmail.com.
Scientific reports
|March 2, 2026
概括
本研究介绍了K频段相位阵列天线的低压射频MEMS分流开关,从而实现了高效的光束转向. 集成系统提供敏捷的控制,信号损失最小,非常适合6G和卫星应用.
科学领域:
- 无线电频率 (RF) 微电子机械系统 (MEMS)
- 天线工程天线工程
- 阶段式阵列技术 阶段式阵列技术
背景情况:
- 阶段阵列天线对于6G和卫星通信等应用程序需要高效的光束方向.
- 现有的解决方案往往面临着高启动电压和信号损失的挑战.
- 射频微电子机械系统 (RF MEMS) 提供了低损耗,高性能射频组件的潜力.
研究的目的:
- 设计和集成一个低压U形曲线RF MEMS变送开关到K频段相位阵列天线中.
- 为了实现敏捷和高效的光束转向与最小的信号退化.
- 为了验证高频前端模块的性能.
主要方法:
- 一个U形曲线RF MEMS分流开关的设计.
- 将开关集成到分布式MEMS传输线 (DMTL) 阶段变速器网络中.
- 系统层面的集成与四个元素串联养的补丁阵列天线.
主要成果:
- 射频MEMS开关实现了5.3V的低拉电压.
- 优秀的射频性能,回归损失优于-30dB,插入损失为0.45dB在18-27 GHz.
- 集成相位阵列显示光束转向范围为±30°,侧叶水平低,辐射效率高.
结论:
- 拟议的MEMS集成相位阵列提供了行业领先的低启动电压和最小的射频损失.
- 该系统可实现离散和可重新配置的相位状态,用于动态光束控制.
- 它是未来6G和卫星前端模块的强有力的候选者.
相关概念视频
MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET Amplifiers
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Biasing of FET
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...


