选择器中的充电触发开关机制使得超低泄漏电流成为可能
Yuting Sun1,2,3, Tamihiro Gotoh4, Jiayi Zhao1
1Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, China.
Nature materials
|March 2, 2026
概括
无形作为一个高效的Ovonic值开关 (OTS) 选择器,克服了3D相变内存的局限性. 这一突破使得人工智能数据存储解决方案更快,更密集,更节能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 当前的人工智能模型要求存储解决方案在速度,密度和能源效率方面超过动态随机访问存储/闪存能力.
- 三维相变存储器提供了一个可扩展的解决方案,但其交点集成受到选择器性能限制的阻碍.
研究的目的:
- 为了确定一个高性能选择器材料3D相变换内存.
- 为了阐明 Ovonic 值开关 (OTS) 选择器的操作机制.
主要方法:
- 反向追踪之前报告的OTS材料以确定新的候选人.
- 描述无形元素作为OTS选择器,评估其电性能,切换速度和耐久性.
- 使用光刺激光谱学和密度函数理论 (DFT) 计算来研究切换机制.
- 将基于的选择器集成到3D相位变换内存阵列中,以验证性能.
主要成果:
- 无形表现出了卓越的OTS选择器性能:超低的泄漏电流 (4 × 10-12 A),开/关比> 10,高驱动电流密度 (21.2 MA cm-2),快速切换 (~ 20 ns) 和高耐力 (> 2 × 10 9 周期).
- 一个充电触发机制涉及密集的陷对和雪崩的乘法被确定为导致突然切换和高电流的原因.
- 集成内存阵列表现出可靠的写入/删除操作,具有显著的0.75-V读取率.
结论:
- 无形已被确立为3D内存应用的主要选择材料.
- 该研究阐明了OTS切换背后的基本机制.
- 这些发现为下一代高性能内存设备铺平了道路,这对于推进人工智能至关重要.
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