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通过完整的顶端门覆盖,实现双门 ITO/HfO 场效应晶体管的长期运行稳定性:全面的偏差应力映射

Jianming Huang¹, Arijit Sarkar², Yajing Chai¹

¹Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Blvd, Shenzhen 518055, China.

|March 2, 2026

概括

使用二氧化 (HfO2) 门绝缘器开发了稳定的氧化 (ITO) 场效应晶体管 (FET). 这些设备表现出卓越的性能和长期稳定性,这对于集成电子设备至关重要.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
设备工程设备工程

背景情况:

氧化 (ITO) 是薄膜晶体管 (TFT) 的一个关键材料.
实现基于ITO的场效应晶体管 (FET) 的稳定,高性能门是单体3D集成的重大挑战.
现有的ITO FET往往遭受长期运行稳定性不佳和歇斯底里症.

研究的目的:

开发完全可扩展的,双门的ITO FET,以提高稳定性和性能.
调查二氧化 (HfO2) 作为 ITO FET 的门绝缘体的使用.
解决基于 ITO 的设备中长期偏差稳定的关键挑战.

主要方法:

使用HfO2门绝缘体制造双门的ITO FET.
设备性能的表征,包括ON/OFF比率,门偏差关闭和门电压稳定性.
在各种环境条件下 (环境,光和高温) 进行长期偏差应力测试.

主要成果:

经过证明的ITO FET在零门偏差下关闭,在3V时的ON/OFF比率为10^7.
实现了高的长期偏移稳定性,具有最小的歇斯底里和值电压漂移 (几十毫伏超过几十千秒).
在正门偏差下抑制负值电压漂移至85°C,在环境和光线条件下保持性能.

结论:

开发的基于HfO2的ITO FET具有卓越的稳定性和性能,与CMOS兼容设备相比.
观察到的稳定性归因于顶门氧化物的全金属覆盖和HfO2缺陷带与ITO的能量对齐.
这些发现表明,ITO FET为实现Si级可靠性提供了可行的途径,可能会超过其他新兴平台,如MoS2/HfO2.

关键词:

这就是ITO ITO ITO.无形氧化物半导体半导体缺陷带缺陷带缺陷带高k氧化物高k氧化物这是歇斯底里症.可靠性的可靠性晶体管是一种晶体管.

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