来自可切换紫外线可见辐射的注射hBN/GaN异质连接的电压控制双频段电光发射
Qiuguo Li1, Jinfeng Zhang2, Junda He2
1Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou, Guangdong 516001, China.
ACS applied materials & interfaces
|March 3, 2026
概括
在六角化 (hBN) 中实现了高效的n型兴奋剂使用兴奋剂,使电压控制的紫外线和可见光发射在光电子学的新型异构结构中成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光电学是指光电子产品.
背景情况:
- 六角化 (hBN) 对深紫外线 (深紫外线) 光电子技术至关重要,但高效的n型兴奋剂仍然是一个重大障碍.
- 开发可调节光源需要精确控制半导体特性.
研究的目的:
- 为了证明在p型化 (p-GaN) 上培养的 (In) 化hBN异构体中的电压控制的双频段电解发光 (EL).
- 调查因多对hBN导电性和排放特性的影响.
- 探索基于宽带间隙半导体异质连接的适应性光源的潜力.
主要方法:
- 在使用磁性喷雾的过程中,In-doped hBN/p-GaN异构体的表轴生长.
- 电气性质的表征,包括载体密度测量.
- 在不同的应用偏差下进行电光发射 (EL) 光谱学.
- 第一个原则计算,以了解缺陷机制.
主要成果:
- 精确性 在兴奋剂启用hBN (3.87 × 10^18 cm^-3) 中的n型导电性和6V以上的激活紫外线发射 (332 nm,378 nm)
- 在GaN区域显示偏差依赖的蓝色 (447nm) 和紫外线 (377nm) 辐射.
- 计算表明In的替换会产生重组中心,而GaN的缺陷会导致黄色蓝色的过渡.
- 这种p-n异构连接可实现高效的载体注入和动态光谱调节.
结论:
- 兴奋剂是一种有效的策略,可以在hBN中实现n型导电性和紫外线辐射.
- 在In-doped的hBN/p-GaN异构结构中,可以在UV和可见光谱中提供电压调节的辐射.
- 这项工作提出了一种新方法,用于在宽带间隙半导体中开发适应性光源.
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