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Updated: Jul 12, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

门电压调节和N2O等离子被动化用于在无电容 2T0C DRAM 氧化物薄膜晶体管中增强保留和内存窗口

Chahwan Yang1,2, Mirinae Lee1,2, Junghoon Han1,3

  • 1Flexible Electronic Device Research Division, Electronics and Telecommunications Research Institute, Daejeon, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|March 3, 2026
PubMed
概括

使用Al:ITZO薄膜晶体管的无电容两晶体管-零电容 (2T0C) 动态随机访问存储器 (DRAM) 实现超过1000秒的保留时间. 设备工程增强了内存窗口,并使下一代内存系统的超低功耗运行成为可能.

关键词:
标签: 伊佐 伊佐 伊佐没有电容的2T0C DRAM记忆窗口是一个记忆窗口.保持保留的时间.门电压的门电压是什么

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Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors08:26

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