超导量子位的金膜的原子尺度表征和电子特性
Junki Makita1, Seth Rice1,2, Giulia Berti1
1Physics Department, Temple University, Philadelphia, Pennsylvania 19122, United States.
ACS nano
|March 4, 2026
概括
在 (Nb) 薄膜上的工程黄金 (Au) 封装层提高了超导量子比特的性能. 在现场制造这些AU覆盖的Nb薄膜可以最大限度地减少原生氧化物,与现场方法相比,增强了超导特性.
科学领域:
- 材料科学 材料科学 材料科学
- 量子计算是一种量子计算.
- 超导电性 超导电性 超导电性
背景情况:
- (Nb) 薄膜对于超导量子比特至关重要,但原生氧化物会导致显著的微波损失.
- 工程薄膜封装层是一种有希望的策略,可以抑制氧化物形成并减少损失.
研究的目的:
- 为了比较研究在现场和现场制造的Au-capped Nb薄膜的接口质量和超导特性.
- 使用先进的光谱技术,将接口特征与Au表面的电子特性相关联.
主要方法:
- 在现场和现场制造 Au-capped Nb 薄膜,使用分子束表层和顺序沉积.
- 利用了互补的结构,化学和光谱技术,包括低温扫描道光谱 (STS).
- 分析了准粒子密度状态 (DOS) 地图,以评估超导特性.
主要成果:
- 在现场和现场外,Aucapped Nb电影显示了大面积的均,完全有间隙的DOS.
- 与现场Nb-Au相比,现场Nb-Au接口表现出较小的诱导超导间隙和扩大一致性峰值.
- 在 ex situ Nb-Au 中观察到局部的 in-gap 状态,表明有剩余的氧化 (NbOx).
结论:
- 扫描道光谱 (STS) 直接将纳米级超导特性与接口准备方法联系起来.
- 控制在现场封装对于最大限度地减少散射和改善超导量子比特中的量子连贯性至关重要.
- 该研究强调了接口上的残留氧化物对超导性能的有害影响.
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