通过拓绝缘体进行近似的超薄TiN的接口增强超导.
Renjie Xie1, Bowen Hao2, Min Ge3
1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
ACS nano
|March 5, 2026
概括
我们在拓绝缘体-超导体 (TI-SC) 异构结构中发现了接口增强超导性. 接口电荷转移提高了超薄超导膜 (SC) 中的临界温度 (Tc).
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子计算是一种量子计算.
背景情况:
- 高质量的拓绝缘体-超导体 (TI-SC) 异构结构对于拓超导和量子量子比特至关重要.
- 传统研究侧重于拓绝缘体 (TI) 层的近距离效应,忽视了对超导体 (SC) 层的操纵.
研究的目的:
- 研究TI/TiN异构结构中的接口增强超导性.
- 探索界面电荷转移在操纵超导性的作用.
- 开发具有强大的超导性的可调节TI-SC混合系统.
主要方法:
- 使用超薄,空气稳定的TiN薄膜制造TI/TiN异构结构.
- 测量带结构以观察狄拉克点移动.
- 第一个原则计算,以阐明费用转移机制.
主要成果:
- 在TI/TiN中观察到接口增强的超导性,与传统的近距离效应不同.
- 证明了狄拉克点移和临界温度 (Tc) 增强之间的相关性.
- 确定了界面电荷转移,特别是涉及BiTe (BiSe) 双层,作为Tc增强的机制.
结论:
- TI/TiN异构结构提供了一个可调节的系统,在超薄厚度下具有强大的超导性.
- 通过电荷转移的接口工程为TI-SC系统中操纵超导提供了一条新的途径.
- 这项工作为先进的拓量子设备铺平了道路.
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