在固态NAND存储中实现辐射硬度,使用层状铁电堆
Lance Fernandes1, Stuart Wodzro1, Prasanna Venkatesan1
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Nano letters
|March 5, 2026
概括
带有层状门堆的铁电场效应晶体管 (FeFET) 在垂直NAND技术中显示出显著的辐射弹性. 这些FeFET在苛刻的环境中提供了可靠的固态存储的有希望的解决方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 纳德闪存对人工智能至关重要,但容易受到辐射诱导的值电压 (Vth) 降解.
- 这种退化给太空和国防应用带来了可靠性挑战.
研究的目的:
- 在垂直NAND技术中研究铁电场效应晶体管 (FeFET) 的辐射抗性.
- 为了评估FeFETs与层状门堆作为辐射硬化存储解决方案.
主要方法:
- 使用Hf0.5Zr0.5O2/Al2O3/Hf0.5Zr0.5O2堆制造垂直NAND兼容的层叠聚通道FeFET.
- 在高达10Mrad的总电离剂量 (TID) 下测试FeFETs.
- 对值电压 (Vth) 转移和内存窗口保留的分析.
- 技术计算机辅助设计 (TCAD) 建模以了解陷行为.
主要成果:
- 层状FeFETs保持了一个完整的内存窗口和强大的切换到10 Mrad ((空气).
- 在经过1Mrad ((空气)) 后的编程和删除状态中观察到微不足道的TID诱导漂移.
- 删除状态在10 Mrad (空气) 时显示了大约2 V的降解,归因于状态依赖的陷.
- 与充电陷NAND相比,FeFETs显示每单位剂量的Vth降解大约为30倍.
结论:
- 与传统的充电陷NAND相比,层状FeFET提供了优越的辐射弹性.
- 带有层状门堆的FeFET是空间和国防应用中辐射硬化固态存储的有希望的候选者.
更多相关视频
相关概念视频
Ferromagnetism
3.3K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
3.3K
Non-ohmic Devices
1.6K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.6K
MOS Capacitor
1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K


