在固态NAND存储中实现辐射硬度,使用层状铁电堆

Lance Fernandes1, Stuart Wodzro1, Prasanna Venkatesan1

  • 1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Nano letters
|March 5, 2026
PubMed
概括

带有层状门堆的铁电场效应晶体管 (FeFET) 在垂直NAND技术中显示出显著的辐射弹性. 这些FeFET在苛刻的环境中提供了可靠的固态存储的有希望的解决方案.

相关概念视频

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
3.3K
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.6K
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K