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VO2 - 集成的超表面用于热调节的宽带太赫兹吸收

Iqra Bashir¹, Ahmed Ali¹, Rahmatullah²

¹College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China. ahmedali3616@gmail.com.

Physical chemistry chemical physics : PCCP

|March 6, 2026

概括

这项研究介绍了一种可调节的太赫兹 (THz) 吸收器,使用二氧化瓦纳 (VO2) 超表面. 该设备通过VO2实现宽带吸收和动态控制.

科学领域:

超材料和纳米光子学
特拉赫兹 (THz) 技术技术
凝聚物质物理学凝聚物质物理学

背景情况:

二氧化瓦纳 (VO2) 呈现可逆的绝缘体-金属相位过渡,使其适用于可调节的设备.
太赫兹 (THz) 设备需要高效且可主动控制的吸收机制.
超表面为操纵电磁波提供了一个平台,可以使用亚波长结构来操纵电磁波.

研究的目的:

为了数值地研究一个VO2集成的超表面吸收器,用于热调节的宽带THz吸收.
使用VO2的相位过渡特性来实现对THz吸收的动态控制.
为了展示一款适用于THz应用的紧,高性能可调节平台.

主要方法:

一个由同心的VO2环共振器,介电隔离器和金属地面平面组成的超表面吸收器的数值模拟.
通过多共振腔形成对电磁能耗散的分析.
在横向电极化 (TE),变化的VO2导电性和不同的入射角度下,对吸收特征的研究.

主要成果:

拟议的结构表现出三种近乎完美的吸收共振,最高吸收率超过95%的3.67,6.19和9.18 THz.
6.67 THz (106.6%的相对带宽) 的超宽吸收带宽可以在2.0 × 10^5 S m^-1.0 的 VO2 导电性下实现.
通过调整VO2导电性来证明持续和动态的吸收控制,证实了极化不敏感性和广角稳定性.

结论:

VO2集成的超表面吸收器有效地实现了可热调节的宽带THz吸收.
该设计利用共振电流循环和阻抗匹配来有效消耗电磁能.
展示的可调节平台对太赫兹检测,生物传感和自适应隐形应用具有前景.

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